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FDS2070N3 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – 150V N-Channel PowerTrench MOSFET | |||
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 75 V, ID= 4.1 A
IAR
Drain-Source Avalanche Current
370 mJ
4.1
A
Off Characteristics
BVDSS
DrainâSource Breakdown
Voltage
âBVDSS
âTJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
GateâBody Leakage, Forward
IGSSR
GateâBody Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 120 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = â20 V, VDS = 0 V
150
V
154
mV/°C
1
µA
100 nA
â100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
âVGS(th)
âTJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static DrainâSource
OnâResistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V,
VGS = 6.0V,
VGS = 10 V,
VDS = 10 V,
ID = 4.1 A
ID = 3.8 A
ID = 4.1 A,TJ = 125°C
ID = 4.1 A
2
2.6
4
V
â7
mV/°C
58
78
mâ¦
61 88
112 160
24
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 75 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
1884
pF
102
pF
35
pF
1.6
â¦
Switching Characteristics (Note 2)
td(on)
TurnâOn Delay Time
tr
TurnâOn Rise Time
td(off)
TurnâOff Delay Time
tf
TurnâOff Fall Time
Qg
Total Gate Charge
Qgs
GateâSource Charge
Qgd
GateâDrain Charge
VDD = 75 V, ID = 1 A,
VGS = 10 V, RGEN = 6 â¦
VDS = 75 V, ID = 4.1 A,
VGS = 10 V
10
20
ns
6
12
ns
40
64
ns
20
36
ns
38
53
nC
8
nC
11
nC
DrainâSource Diode Characteristics and Maximum Ratings
IS
Maximum Continuous DrainâSource Diode Forward Current
VSD
DrainâSource Diode Forward
Voltage
VGS = 0 V, IS = 2.5 A (Note 2)
trr
Diode Reverse Recovery Time IF = 4.1A
Qrr
Diode Reverse Recovery Charge diF/dt = 100 A/µs
(Note 2)
2.5
A
0.75 1.2
V
75
nS
404
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 40°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS2070N3 Rev B1(W)
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