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FDPF045N10A Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100V, 67A, 4.5m
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Package Marking and Ordering Information
Device Marking
FDPF045N10A
Device
FDPF045N10A
Package
TO-220F
Reel Size
-
Tape Width
-
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V
100
ID = 250µA, Referenced to 25oC
-
VDS = 80V, VGS = 0V
-
VDS = 80V, TC = 150oC
-
VGS = ±20V, VDS = 0V
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 67A
VDS = 10V, ID = 67A
2.0
-
(Note 4)
-
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
-
VDS = 50V, VGS = 0V
f = 1MHz
-
Crss
Reverse Transfer Capacitance
-
Coss(er)
Engry Releted Output Capacitance
VDS = 50V, VGS = 0V
-
Qg(tot)
Total Gate Charge at 10V
-
Qgs
Gate to Source Gate Charge
VGS = 10V, VDS = 50V
-
Qgs2
Gate Charge Threshold to Plateau
ID = 100A
-
Qgd
Gate to Drain “Miller” Charge
-
Switching Characteristics
td(on)
tr
td(off)
tf
ESR
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
-
VDD = 50V, ID = 100A
-
VGS = 10V, RGEN = 4.7Ω
-
(Note 4, 5)
-
Drain Open, f = 1MHz
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 67A
-
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, VDD = 50V, ISD = 100A
-
dIF/dt = 100A/µs
(Note 4)
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, IAS = 20.6A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 100A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ.
-
0.06
-
-
-
-
3.7
127
3961
925
34
1521
57
17
8
13
23
26
50
15
1.9
-
-
-
75
120
Quantity
50
Max. Units
-
-
1
500
±100
V
V/oC
µA
nA
4.0
V
4.5 mΩ
-
S
5270 pF
1230 pF
-
pF
-
pF
74
nC
-
nC
-
nC
-
nC
56
ns
62
ns
110
ns
40
ns
-
Ω
67
A
268
A
1.3
V
-
ns
-
nC
FDPF045N10A Rev. C0
2
www.fairchildsemi.com
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