FDP8443_F085 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GS
I_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T_C < 144^oC, V_GS = 10V)
Continuous (T_amb = 25^oC, V_GS = 10V, with R_θJA = 62^oC/W)
Pulsed
E_AS
Single Pulse Avalanche Energy
Power Dissipation
P_D
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
Ratings
40
±20
80
20
See Figure 4
531
188
1.25
-55 to +175
Units
V
V
A
mJ
W
W/^oC
o_C
R_θJC
R_θJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
0.8
(Note 2)
62
Package Marking and Ordering Information
o_C/W
o_C/W
Device Marking
Device
FDP8443
FDP8443_F085
Package
TO-220AB
Reel Size
Tube
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
Tape Width
N/A
Quantity
50 units
Min Typ Max Units
B_VDSS
I_DSS
I_GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Characteristics
I_D = 250μA, V_GS = 0V
40
V_DS = 32V,
V_GS = 0V
-
T_C = 150^oC
-
V_GS = ±20V
-
-
-
V
-
1
μA
-
250
-
±100 nA
V_GS(th) Gate to Source Threshold Voltage
r_DS(on) Drain to Source On Resistance
Dynamic Characteristics
V_GS = V_DS, I_D = 250μA
I_D = 80A, V_GS= 10V
I_D = 80A, V_GS= 10V,
T_J = 175^oC
2
2.8
4
V
-
2.7
3.5
mΩ
-
4.7
6.1
C_iss
C_oss
C_rss
R_G
Q_g(TOT)
Q_g(TH)
Q_gs
Q_gs2
Q_gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
V_DS = 25V, V_GS = 0V,
f = 1MHz
V_GS = 0.5V, f = 1MHz
V_GS = 0 to 10V
V_GS = 0 to 2V
V_DD = 20V
I_D = 35A
I_g = 1mA
-
9310
-
pF
-
800
-
pF
-
510
-
pF
-
0.9
-
Ω
-
142 185 nC
-
17.5 23
nC
-
36
-
nC
-
18.8
-
nC
-
32
-
nC
FDP8443_F085 Rev. A
2
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