FDP8442 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 40V, 80A, 3.1mΩ

MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GS
I_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T_C<158^oC, V_GS = 10V)
Drain Current Continuous (T_amb = 25^oC, V_GS = 10V, with R_θJA = 62^oC/W)
Pulsed
E_AS
Single Pulse Avalanche Energy
Power Dissipation
P_D
Derate above 25^oC
(Note 1)
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
Ratings
40
±20
80
23
See Figure 4
720
254
1.7
-55 to +175
Units
V
V
A
mJ
W
W/^oC
o_C
R_θJC
R_θJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
0.59
(Note 2)
62
Package Marking and Ordering Information
o_C/W
o_C/W
Device Marking
FDP8442
Device
FDP8442
Package
TO-220AB
Reel Size
Tube
Electrical Characteristics T_J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Tape Width
N/A
Min Typ
Quantity
50 units
Max Units
Off Characteristics
B_VDSS
I_DSS
I_GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I_D = 250µA, V_GS = 0V
40
V_DS = 32V
V_GS = 0V
-
T_J = 150°C
-
V_GS = ±20V
-
-
-
V
-
1
µA
-
250
-
±100 nA
On Characteristics
V_GS(th) Gate to Source Threshold Voltage
r_DS(on) Drain to Source On Resistance
V_DS = V_GS, I_D = 250µA
I_D = 80A, V_GS = 10V
I_D = 80A, V_GS = 10V,
T_J = 175°C
2
2.9
4
V
-
2.3
3.1
-
3.9
5.3
mΩ
Dynamic Characteristics
C_iss
C_oss
C_rss
R_G
Q_g(TOT)
Q_g(TH)
Q_gs
Q_gs2
Q_gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V_DS = 25V, V_GS = 0V,
f = 1MHz
-
12200
-
pF
-
1040
-
pF
-
640
-
pF
V_GS = 0.5V, f = 1MHz
-
V_GS = 0 to 10V
-
V_GS = 0 to 2V _{VDD = 20V}
-
I_D = 80A
-
I_g = 1mA
-
1.0
-
Ω
181 235
nC
23
30
nC
49
-
nC
26
-
nC
-
41
-
nC
FDP8842 Rev. A
2
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