English
Language : 

FDP083N15A Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 150V, 105A, 8.3m
◁
Package Marking and Ordering Information
Device Marking
FDP083N15A
Device
FDP083N15A_F102
Package
TO-220
Description
F102: Trimmed Leads
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TC = 25oC
150
ID = 250µA, Referenced to 25oC
-
VDS = 120V, VGS = 0V
-
VDS = 120V, TC = 150oC
-
VGS = ±20V, VDS = 0V
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 75A
VDS = 10V, ID = 75A
2.0
-
(Note 4)
-
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
-
VDS = 25V, VGS = 0V
f = 1MHz
-
Crss
Reverse Transfer Capacitance
-
Qg(tot)
Total Gate Charge at 10V
-
Qgs
Gate to Source Gate Charge
VDS = 75V, ID = 75A
-
Qgs2
Gate Charge Threshold to Plateau
VGS = 10V
-
Qgd
Gate to Drain “Miller” Charge
-
ESR
Equivalent Series Resistance(G-S)
Drain Open, f=1MHz
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
VDD = 75V, ID = 75A
-
VGS = 10V, RGEN = 4.7Ω
-
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
-
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 75A, VDD = 120V
-
dIF/dt = 100A/µs
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting TJ = 25°C, L = 3 mH, ISD = 19 A
3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Quantity
50
Typ. Max. Units
-
-
V
0.08
-
V/oC
-
1
µA
-
500
-
±100 nA
-
4.0
V
6.85 8.30 mΩ
139
-
S
4645 6040 pF
1445 1880 pF
100
-
pF
64.5
84
nC
19.1
-
nC
8.7
-
nC
13.5
-
nC
2.5
-
Ω
22
54
ns
58
126
ns
61
132
ns
26
62
ns
-
105
A
-
420
A
-
1.25
V
96
-
ns
268
-
nC
FDP083N15A_F102 Rev. A2
2
www.fairchildsemi.com
 ▷