FDMS86300DC Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – N-Channel Dual CoolTM Power Trench® MOSFET 80 V, 60 A, 3.1 mΩ

Electrical Characteristics T_J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BV_DSS
ΔBV_DSS
ΔT_J
I_DSS
I_GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I_D = 250 μA, V_GS = 0 V
80
I_D = 250 μA, referenced to 25 °C
V_DS = 64 V, V_GS = 0 V
V_GS = ±20 V, V_DS = 0 V
On Characteristics
V_GS(th)
ΔV_GS(th)
ΔT_J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
r_DS(on)
Static Drain to Source On Resistance
g_FS
Forward Transconductance
V_GS = V_DS, I_D = 250 μA
2.5
I_D = 250 μA, referenced to 25 °C
V_GS = 10 V, I_D = 24 A
V_GS = 8 V, I_D = 21 A
V_GS = 10 V, I_D = 24 A, T_J = 125 °C
V_DD = 10 V, I_D = 24 A
Dynamic Characteristics
C_iss
C_oss
C_rss
R_g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V_DS = 40 V, V_GS = 0 V,
f = 1 MHz
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Q_g(TOT)
Q_gs
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
V_DD = 40 V , I_D = 24 A,
V_GS = 10 V, R_GEN = 6 Ω
V_GS = 0 V to 10 V
V_GS = 0 V to 8 V _{VDD = 40 V}
I_D = 24 A
Drain-Source Diode Characteristics
V_SD
Source to Drain Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_S = 2.7 A
V_GS = 0 V, I_S = 24 A
(Note 2)
(Note 2)
I_F = 24 A, di/dt = 100 A/μs
Typ
45
3.3
-11
2.6
3.1
4.1
79
5265
929
21
1.2
29
25
35
9
72
59
26
14
0.72
0.80
56
42
Max Units
V
mV/°C
1
μA
±100 nA
4.5
V
mV/°C
3.1
4.0
mΩ
5.0
S
7005 pF
1235 pF
50
pF
Ω
47
ns
44
ns
57
ns
18
ns
101
nC
84
nC
nC
nC
1.2
V
1.3
88
ns
67
nC
©2012 Fairchild Semiconductor Corporation
2
FDMS86300DC Rev. C1
www.fairchildsemi.com