FDMS7694 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30 V, 9.5 mΩ

Electrical Characteristics T_J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV_DSS
Drain to Source Breakdown Voltage
I_D = 250 μA, V_GS = 0 V
30
V
ΔBV_DSS
ΔT_J
Breakdown Voltage Temperature
Coefficient
I_D = 250 μA, referenced to 25 °C
16
mV/°C
I_DSS
Zero Gate Voltage Drain Current
V_DS = 24 V, V_GS = 0 V
1
μA
I_GSS
Gate to Source Leakage Current, Forward V_GS = 20 V, V_DS = 0 V
100
nA
On Characteristics
V_GS(th)
ΔV_GS(th)
ΔT_J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
r_DS(on)
Static Drain to Source On Resistance
g_FS
Forward Transconductance
V_GS = V_DS, I_D = 250 μA
1.0
I_D = 250 μA, referenced to 25 °C
V_GS = 10 V, I_D = 13.2 A
V_GS = 4.5 V, I_D = 10.5 A
V_GS = 10 V, I_D = 13.2 A, T_J = 125 °C
V_DS = 5 V, I_D = 13.2 A
2.0
3.0
V
-6
mV/°C
7.6
9.5
11.1 14.5 mΩ
10.6 13.3
55
S
Dynamic Characteristics
C_iss
C_oss
C_rss
R_g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V_DS = 15 V, V_GS = 0 V,
f = 1 MHz
1060 1410 pF
353
470
pF
36
55
pF
0.8
1.6
Ω
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_g
Q_gs
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V_DD = 15 V, I_D = 13.2 A,
V_GS = 10 V, R_GEN = 6 Ω
V_GS = 0 V to 10 V
V_GS = 0 V to 4.5 V _{VDD = 15 V,}
I_D = 13.2 A
8.4
17
ns
2
10
ns
18
33
ns
1.6
10
ns
15
22
nC
7
10
nC
3.3
nC
2.0
nC
Drain-Source Diode Characteristics
V_SD
Source to Drain Diode Forward Voltage
V_GS = 0 V, I_S = 2.1 A
V_GS = 0 V, I_S = 13.2 A
(Note 2)
(Note 2)
0.76
1.1
V
0.85
1.2
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_F = 13.2 A, di/dt = 100 A/μs
23
37
ns
7
14
nC
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_F = 13.2 A, di/dt = 300 A/μs
18
33
ns
14
26
nC
Notes:
1. R_θJA is determined with the device mounted on a 1 in² pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_θJC is guaranteed by design while R_θCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in² pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E_AS of 21 mJ is based on starting T_J = 25 °C, L = 0.3 mH, I_AS = 12 A, V_DD = 27 V, V_GS = 10 V. 100% test at L = 0.1 mH, I_AS = 20 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7694 Rev.C2
2
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