FDMS7670 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30 V, 3.8 mΩ

Electrical Characteristics T_J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV_DSS
Drain to Source Breakdown Voltage
I_D = 250 µA, V_GS = 0 V
30
∆BV_DSS
∆T_J
Breakdown Voltage Temperature
Coefficient
I_D = 250 µA, referenced to 25 °C
I_DSS
Zero Gate Voltage Drain Current
V_DS = 24 V, V_GS = 0 V
I_GSS
Gate to Source Leakage Current, Forward V_GS = 20 V, V_DS = 0 V
V
15
mV/°C
1
µA
100
nA
On Characteristics
V_GS(th)
∆V_GS(th)
∆T_J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
r_DS(on)
Static Drain to Source On Resistance
g_FS
Forward Transconductance
V_GS = V_DS, I_D = 250 µA
1.25
1.9
I_D = 250 µA, referenced to 25 °C
-7
V_GS = 10 V, I_D = 21 A
2.9
V_GS = 4.5 V, I_D = 17 A
4.1
V_GS = 10 V, I_D = 21 A, T_J = 125 °C
4.0
V_DS = 5 V, I_D = 21 A
136
3.0
V
mV/°C
3.8
5.0
mΩ
5.3
S
Dynamic Characteristics
C_iss
C_oss
C_rss
R_g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V_DS = 15 V, V_GS = 0 V,
f = 1 MHz
3085 4105 pF
990 1315
pF
75
115
pF
1.2
2.5
Ω
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_g
Q_gs
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V_DD = 15 V, I_D = 21 A,
V_GS = 10 V, R_GEN = 6 Ω
V_GS = 0 V to 10 V
V_GS = 0 V to 4.5 V _{VDD = 15 V,}
I_D = 21 A
15
26
ns
6
12
ns
31
50
ns
5
10
ns
40
56
nC
17
24
nC
9.8
nC
4.4
nC
Drain-Source Diode Characteristics
V_SD
Source to Drain Diode Forward Voltage
V_GS = 0 V, I_S = 2.1 A
V_GS = 0 V, I_S = 21 A
(Note 2)
(Note 2)
0.7
0.95
V
0.8
1.1
t_rr
Reverse Recovery Time
38
61
ns
Q_rr
Reverse Recovery Charge
19
34
nC
t_a
Reverse Recovery Fall Time
I_F = 21 A, di/dt = 100 A/µs
14
ns
t_b
Reverse Recovery Rise Time
24
ns
S
Softness (t_b/t_a)
1.7
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_F = 21 A, di/dt = 300 A/µs
32
51
ns
34
54
nC
Notes:
1. R_θJA is determined with the device mounted on a 1in² pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_θJC is guaranteed by design while R_θCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in² pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. E_AS of 144 mJ is based on starting T_J = 25 °C, L = 1 mH, I_AS = 17 A, V_DD = 27 V, V_GS = 10 V. 100% test at L = 0.3 mH, I_AS = 22 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7670 Rev.D
2
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