FDMS3626S Datasheet, PDF (2/12 Pages) Fairchild Semiconductor – PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET

Electrical Characteristics T_J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BV_DSS
ΔBV_DSS
ΔT_J
I_DSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I_GSS
Gate to Source Leakage Current
I_D = 250 μA, V_GS = 0 V
I_D = 1 mA, V_GS = 0 V
I_D = 250 μA, referenced to 25 °C
I_D = 10 mA, referenced to 25 °C
V_DS = 20 V, V_GS = 0 V
V_GS = 12 V/-8 V, V_DS= 0 V
Q1 25
Q2 25
Q1
Q2
Q1
Q2
Q1
Q2
V
12
25
mV/°C
1
μA
500 μA
±100 nA
±100 nA
On Characteristics
V_GS(th)
ΔV_GS(th)
ΔT_J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
r_DS(on)
Drain to Source On Resistance
g_FS
Forward Transconductance
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate Resistance
V_GS = V_DS, I_D = 250 μA
V_GS = V_DS, I_D = 1 mA
Q1 0.8 1.2 2.0
Q2 1.1 1.4 2.2
V
I_D = 250 μA, referenced to 25 °C Q1
I_D = 10 mA, referenced to 25 °C
Q2
-4
-3
mV/°C
V_GS = 10 V, I_D = 17.5 A
V_GS = 4.5 V, I_D = 16 A
Q1
V_GS = 10 V, I_D = 17.5 A,T_J =125 °C
V_GS = 10 V, I_D = 25 A
V_GS = 4.5 V, I_D = 22 A
Q2
V_GS = 10 V, I_D =25 A ,T_J =125 °C
3.8 5.0
4.4 5.7
5.4 7.0
mΩ
2.1 2.6
2.6 3.2
2.9 3.8
V_DS = 5 V, I_D = 17.5 A
V_DS = 5 V, I_D = 25 A
Q1
100
Q2
227
S
Q1:
Q1
V_DS = 13 V, V_GS = 0 V, f = 1 MHZ ^Q2
1570
2545
pF
Q2:
Q1
448
Q2
716
pF
V_DS = 13 V, V_GS = 0 V, f = 1 MHZ _Q1
61
Q2
103
pF
Q1
0.4
Q2
0.9
Ω
Switching Characteristics
t_d(on)
t_r
Turn-On Delay Time
Rise Time
Q1
7
Q2
8
ns
Q1:
Q1
2
V_DD = 13 V, I_D = 17.5 A, R_GEN = 6 Ω _Q2
4
ns
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
Q2:
Q1
23
V_DD = 13 V, I_D = 25 A, R_GEN = 6 Ω ^Q2
31
ns
Q1
2
Q2
3
ns
Q_g
Total Gate Charge
Q_g
Total Gate Charge
V_GS = 0 V to 10 V _Q1
Q1
26
Q2
41
nC
V_DD = 13 V,
V_GS = 0 V to 4.5 V _{ID = 17.5 A}
Q1
Q2
12
19
nC
Q_gs
Gate to Source Gate Charge
Q_gd
Gate to Drain “Miller” Charge
Q2
Q1
3.3
V_DD = 13 V,
Q2
4.9
nC
I_D = 25 A
Q1
2.7
Q2
4.3
nC
©2011 Fairchild Semiconductor Corporation
2
FDMS3626S Rev.C2
www.fairchildsemi.com