FDMA1025P_08 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – Dual P-Channel PowerTrench® MOSFET

Electrical Characteristics T_J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV_DSS
∆BV_DSS
∆T_J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I_DSS
Zero Gate Voltage Drain Current
I_GSS
Gate to Source Leakage Current
I_D = –250µA, V_GS = 0V
I_D = –250µA, referenced to 25°C
V_DS = –16V,
V_GS = 0V
T_J = 125°C
V_GS = ±12V, V_DS = 0V
–20
V
14
mV/°C
–1
µA
–100
±100 nA
On Characteristics
V_GS(th)
∆V_GS(th)
∆T_J
r_DS(on)
g_FS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
V_GS = V_DS, I_D = –250µA
–0.4 –0.9 –1.5
V
I_D = –250µA, referenced to 25°C
V_GS = –4.5V, I_D = –3.1A
V_GS = –2.5V, I_D = –2.3A
V_GS = –4.5V, I_D = –3.1A,T_J = 125°C
V_DS = –5V, I_D = –3.1A
–3.8
mV/°C
88
155
144 220 mΩ
121 220
6.2
S
Dynamic Characteristics
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_DS = –10V, V_GS = 0V,
f = 1MHz
340 450 pF
80
105 pF
45
70
pF
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Q_g(TOT)
Q_gs
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V_DD = –10V, I_D = –3.1A
V_GS = –4.5V, R_GEN = 6Ω
V_GS = 0V to –4.5V _{VDD = –10V}
I_D = –3.1A
5
10
ns
14
26
ns
13
24
ns
8
16
ns
3.4
4.8
nC
0.8
nC
1.0
nC
Drain-Source Diode Characteristics
V_SD
Source to Drain Diode Forward Voltage V_GS = 0V, I_S = –1.1A (Note 2)
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_F = –3.1A, di/dt = 100A/µs
–0.8 –1.2
V
17
26
ns
10
15
nC
Notes:
1. R_θJA is determined with the device mounted on a 1in² pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_θJC is guaranteed by design while R_θCA is determined by
the user's board design.
a. 86°C/W when mounted on a
1in² pad of 2 oz copper.
b. 173°C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDMA1025P Rev.B2
2
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