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FDB12N50F Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – N-Channel MOSFET, FRFET 500V, 11.5A, 0.7Ω
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Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDB12N50F
Device
FDB12N50FTM_WS
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
Test Conditions
Min.
ID = 250µA, VGS = 0V, TJ = 25oC
500
ID = 250µA, Referenced to 25oC
-
VDS = 500V, VGS = 0V
-
VDS = 400V, TC = 125oC
-
VGS = ±30V, VDS = 0V
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VDS = 40V, ID = 6A
3.0
-
(Note 4)
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
-
VDS = 25V, VGS = 0V
f = 1MHz
-
-
-
VDS = 400V, ID = 11.5A
-
VGS = 10V
(Note 4, 5)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
VDD = 250V, ID = 11.5A
-
RG = 25Ω
-
(Note 4, 5)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 11.5A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 11.5A
dIF/dt = 100A/µs
-
-
-
-
(Note 4)
-
Typ.
-
0.5
-
-
-
-
0.59
12
1050
135
11
21
6
9
21
45
50
35
-
-
-
134
0.37
Quantity
800
Max. Units
-
-
10
100
±100
V
V/oC
µA
nA
5.0
V
0.7
Ω
-
S
1395 pF
180 pF
17
pF
30
nC
-
nC
-
nC
50
ns
100
ns
110
ns
80
ns
11.5
A
46
A
1.5
V
-
ns
-
µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 11.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDB12N50F Rev. A
2
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