FCP130N60 Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – N-Channel SuperFET II MOSFET

Package Marking and Ordering Information
Part Number
FCP130N60
Top Mark
FCP130N60
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics T_C = 25^oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BV_DSS
ΔBV_DSS
/ ΔT_J
I_DSS
I_GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V_GS = 0 V, I_D = 10 mA, T_J = 25°C
600
V_GS = 0 V, I_D = 10 mA, T_J = 150°C 650
I_D = 10 mA, Referenced to 25^oC
-
V_DS = 600 V, V_GS = 0 V
-
V_DS = 480 V, V_GS = 0 V, T_C = 125^oC
-
V_GS = ±20 V, V_DS = 0 V
-
On Characteristics
V_GS(th)
Gate Threshold Voltage
V_GS = V_DS, I_D = 250 μA
2.5
R_DS(on)
Static Drain to Source On Resistance
V_GS = 10 V, I_D = 14 A
-
g_FS
Forward Transconductance
V_DS = 20 V, I_D = 14 A
-
Dynamic Characteristics
C_iss
C_oss
C_rss
C_oss(eff.)
Q_g(tot)
Q_gs
Q_gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
-
V_DS = 380 V, V_GS = 0 V,
f = 1 MHz
-
-
V_DS = 0 V to 480 V, V_GS = 0 V
-
V_DS = 380 V, I_D = 14 A,
-
V_GS = 10 V
-
(Note 4)
-
f = 1 MHz
-
Typ.
-
-
0.67
-
1.3
-
-
112
26
2700
65
2.85
240
54
12
14
1
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V_DD = 380 V, I_D = 14 A,
V_GS = 10 V, R_g = 4.7 Ω
-
25
-
16
-
65
(Note 4)
-
4
Drain-Source Diode Characteristics
I_S
Maximum Continuous Drain to Source Diode Forward Current
I_SM
Maximum Pulsed Drain to Source Diode Forward Current
V_SD
Drain to Source Diode Forward Voltage
V_GS = 0 V, I_SD = 14 A
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_SD = 14 A,
dI_F/dt = 100 A/μs
-
-
-
-
-
-
-
376
-
7.6
Quantity
50 units
Max. Unit
-
-
-
1
-
±100
V
V/^oC
μA
nA
3.5
V
130 mΩ
-
S
3590 pF
85
pF
-
pF
-
pF
70
nC
-
nC
-
nC
-
Ω
60
ns
42
ns
140
ns
18
ns
28
A
84
A
1.2
V
-
ns
-
μC
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I_AS = 6 A, V_DD = 50 V, R_G = 25 Ω, starting T_J = 25°C.
3. I_SD ≤ 14 A, di/dt ≤ 200 A/μs, V_DD ≤ BV_DSS, starting T_J = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2014 Fairchild Semiconductor Corporation
2
FCP130N60 Rev. C1
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