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FCH47N60F_13 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – N-Channel SuperFET FRFET MOSFET
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Package Marking and Ordering Information
Device Marking Device
FCH47N60F
FCH47N60F_F133
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250A, TJ = 25C
600
VGS = 0V, ID = 250A, TJ = 150C
--
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient
ID = 250A, Referenced to 25C
--
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 47A
--
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
--
VDS = 480V, TC = 125C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250A
3.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 23.5A
--
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 23.5A
(Note 4) --
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
--
f = 1.0MHz
--
--
VDS = 480V, VGS = 0V, f = 1.0MHz
--
VDS = 0V to 400V, VGS = 0V
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 300V, ID = 47A
RG = 25
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 480V, ID = 47A
VGS = 10V
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 47A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 47A
dIF/dt =100A/s
--
--
--
--
(Note 4)
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 18A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD  47A, di/dt  1,200A/s, VDD  BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width  300s, Duty Cycle  2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ
--
650
0.6
700
--
--
--
--
--
0.062
40
5900
3200
250
160
420
185
210
520
75
210
38
110
--
--
--
240
2.04
Max Unit
--
V
--
V
-- V/C
--
V
10
A
100 A
100 nA
-100 nA
5.0
V
0.073 
--
S
8000 pF
4200 pF
--
pF
--
pF
--
pF
430 ns
450 ns
1100 ns
160 ns
270 nC
--
nC
--
nC
47
A
141
A
1.4
V
--
ns
--
C
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
2
www.fairchildsemi.com
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