DF01S1 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – Bridge Rectifier

Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
DF005S1 DF01S1 DF02S1 DF04S1 DF06S1 DF08S1 DF10S1
V_RRM
Maximum Recurrent Peak
Reverse Voltage
50
100
200
400
600
800 1000 V
V_RMS
Maximum RMS Bridge Input
Voltage
35
70
140
280
420
560
700 V
V_DC
Maximum DC Blocking
Voltage
50
100
200
400
600
800 1000 V
I_F(AV)
Maximum Average Forward
Current T_A = 40°C
1.0
A
Peak Forward Surge Current
I_FSM
8.3 ms Single Half-Sine
Wave Superimposed on
35
A
Rated Load(JEDEC Method)
T_STG Storage Temperature Range
-55 to +150
°C
T_J
Operating Junction Tempera-
ture Range
-55 to +150
°C
Thermal Characteristics⁽¹⁾
Symbol
R_θJA
ψ_JL
Parameter
Conditions
Single-Die Measurement
(Maximum Land Pattern: 13 x 13 mm)
Thermal Resistance,
Junction to Ambient
Multi-Die Measurement
(Maximum Land Pattern:
13 x 13 mm)
Multi-Die Measurement
(Minimum Land Pattern: 1.3 x 1.5 mm)
Thermal Characterization Single-Die Measurement
Parameter, Junction to Lead (Maximum and Minimum Land Pattern)
Max.
65
50
105
27
Unit
°C/W
°C/W
Note:
1. The thermal resistances (R_θJA & ψ_JL) are characterized with the device mounted on the following FR4 printed circuit
boards, as shown in Figure 1 and Figure 2 PCB size: 76.2 x 114.3 mm.
Heating effect from adjacent dice is considered and only two dices are powered at the same time.
F
S
F
S
S
S
F
F
Figure 1. Maximum Pads of 2 oz Copper
© 2014 Fairchild Semiconductor Corporation
DF005S1 - DF10S1 Rev. 1.0.1
2
Figure 2. Minimum Pads of 2 oz Copper
www.fairchildsemi.com