D44H8 Datasheet, PDF (2/4 Pages) STMicroelectronics – NPN SILICON POWER TRANSISTORS

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
NPN Power Amplifier
(continued)
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
Collector-Emitter Breakdown Voltage*
I_CBO
Collector-Cutoff Current
I_EBO
Emitter-Cutoff Current
I_C = 100 mA, I_B = 0
V_CB = 60 V, I_E = 0
V_EB = 5.0 V, I_C = 0
ON CHARACTERISTICS
h_FE
DC Current Gain
VCE(sat)
V_BE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Base-Emitter On Voltage
I_C = 2.0 A, V_CE = 1.0 V
I_C = 4.0 A, V_CE = 1.0 V
I_C = 8.0 A, I_B = 0.4 A
IC = 8.0 A, IB = 0.8 A
I_C = 10 mA, V_CE = 2.0 V
SMALL SIGNAL CHARACTERISTICS
f_T
Current Gain - Bandwidth Product
I_C = 500 mA, V_CE = 10 V,
60
V
10
µA
100
µA
60
40
1.0
V
1.5
V
0.52
0.65
V
50
MHz
DC Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
200
125 °C
Vce = 5V
150
100 ^{25 °C}
50
- 40 °C
0
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β = 10
0.6
0.4
- 40 ºC
0.2
25 °C
125 ºC
0
0.1
1
10
I _C - COLLECTOR CURRENT (A)
P 4Q