BUT11 Datasheet, PDF (2/4 Pages) NXP Semiconductors – Silicon diffused power transistors

Typical Characteristics
1000
100
10
VCE = 5V
1
IC = 5 IB
10
1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
IC = 5 IB
1
VBE(sat)
0.1
0.01
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
10
Ic MAX (Continuous)
DC
1
0.1
0.01
1
BUT11A
BUT11
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
0.1
VCE(sat)
0.01
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
10
8
6
4
2
BUT11
BUT11A
0
0
200
400
600
800
1000
1200
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Reverse Biased Safe OPerating Area
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TC[^OC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. B1, August 2001