BU406 Datasheet, PDF (2/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W)

Typical Characteristics
5
4
IB ⁼
200mA
IB
=
180mA
IB ⁼
1_I6_B⁰_=I^m_B1^A_=401m20AmA
IB = ^100m
A
IB = ^80mA
3
IB = ^60mA
IB = ^40mA
2
IB = 20mA
1
0
0
1
2
3
4
5
6
7
8
9
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10000
1000
VBE(sat)
IC = 10 IB
100
VCE(sat)
10
1
10
100
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC Max. (Pulsed)
10
IC Max. (Continuous)
10ms
1
0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
1000
100
VCE = 5V
10
1
1
10
100
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
1000
100
f = 1MHz
10
1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
TC[^oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000