BD244 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

Typical Characteristics
1000
VCE = 2V
100
10
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
-1
IC = 10.1 IB
-0.1
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
T[^oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
-1.8
-1.7
-1.6
-1.5
-1.4
-1.3
-1.2
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.1
IC = 10.1 IB
-1
-10
IC[A], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
-100
-10
IC(max)
10ms
10µs
100µs
-1
-0.1
-1
BD244
BD244A
BD244B
BD244C
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
Rev. A, February 2000