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| BCP52_14 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – PNP General-Purpose Amplifier | |||
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Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Total Device Dissipation
Derate Above 25°C
Thermal Resistance, Junction to Ambient
Max.
1.5
12
83.3
Unit
W
mW/°C
°C/W
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
BVCEO
BVCBO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = -10 mA, IB = 0
IC = -100 μA, IE = 0
IE = -10 μA, IC = 0
VCB = -30 V, IE = 0
VCB = -30 V, IE = 0, TA = 125°C
VEB = -5.0 V, IC = 0
IC = -5.0 mA, VCE = -2.0 V
IC = -150 mA, VCE = -2.0 V
IC = -500 mA, VCE = -2.0 V
IC = -500 mA, IB = -50 mV
IC = -500 mA, VCE = -2.0 V
Min.
-60
-60
-5.0
25
40
25
Max.
-100
-10
-10
Unit
V
V
V
nA
μA
μA
250
-0.5
V
-1.0
V
© 1997 Fairchild Semiconductor Corporation
BCP52 Rev. 1.1.0
2
www.fairchildsemi.com
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