BC33725 Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V (B R )C E O
Collector-Emitter Breakdown
IC = 10 mA, IB = 0
45
V
Voltage
V (B R )C E S
Collector-Base Breakdown Voltage I_C = 100 µA, I_E = 0
50
V
V (B R )E B O
Emitter-Base Breakdown Voltage
IE = 100 µA, IC = 0
5.0
V
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB = 20 V, IE = 0, TA = +25 °C
VCB = 20 V, IE = 0, TA = +150
°C
VEB = 5.0 V, IC = 0
100
nA
5.0
µA
10
µA
ON CHARACTERISTICS
h_FE
DC Current Gain
V_CE = 1.0 V, I_C = 100 mA
337-16
100
250
337-25
160
400
V_CE(sat)
Collector-Emitter Saturation Voltage
V_CE = 1.0 V, I_C = 500 mA
I_C = 500 mA, I_B = 50 mA
40
0.7
V
V_BE(on)
Base-Emitter On Voltage
V_CE = 1.0 V, I_C = 500 mA
1.2
V