BC32725TA Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – Switching and Amplifier Applications

Typical Characteristics
-500
-400
-300
IB ^{= -}
IB ⁼
IB
I
B^=5-I.=_B^4-0I=.m4_B^-5.3=-mI0A_B^{.3m5-A=.m02A-m.A52mA.0AmA}
IB ^{= - 1.5mA}
-200
IB = - 1.0mA
P_{T = 600mW}
IB = - 0.5mA
-100
IB = 0
-0
-1
-2
-3
-4
-5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
1000
100
10
PULSE
VCE = - 2.0V
- 1.0V
1
-0.1
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
-1000
-100
VCE = -1V
PULSE
-10
-1
-0.1
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
-20
-16
I
B
=
-
80^µA
I_B^{= -}
70^µA
I_B^{= -}
60^µA
I_B ^{= - 50µA}
-12
I _B ^{= - 40µA}
-8
I_B ^{= - 30µA}
P
T
=
600mW
I_B = ^{- 20µA}
-4
I_B = - ^10µA
I_B = 0
-10
-20
-30
-40
-50
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 2. Static Characteristic
-10
IC = 10 IB
PULSE
-1
VCE(sat)
-0.1
VBE(sat)
-0.01
-0.1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
-1000
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
VCE = -5.0V
100
10
-1
-10
-100
IC[mA], COLLECTOR CURRENT
Figure 6. Gain Bandwidth Product
Rev. B1, August 2002