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| 2N7002K Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET | |||
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics (Note1)
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage
On Characteristics (Note1)
VGS= 0V, ID=10uA
VDS= 60V, VGS= 0V
VDS= 60V, VGS= 0V, @TC = 125°C
VGS= ±20V, VDS= 0V
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250uA
RDS(ON) Satic Drain-Source On-Resistance VGS = 10V, ID = 0.5A
VGS = 4.5V, ID = 200mA
ID(ON) On-State Drain Current
VGS = 10V, VDS= 7.5V
VGS = 4.5V, VDS= 10V
gFS Forward Transconductance
VDS = 10V, ID = 0.2A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS= 0V, f = 1.0MHz
tD(ON) Turn-On Delay Time
tD(OFF) Turn-Off Delay Time
VDD = 30V, IDSS = 200mA,
RG = 10Ω, VGS= 10V
Note1 : Short duration test pulse used to minimize self-heating effect.
MIN
60
1.0
1.5
1.2
200
MAX
1.0
500
±10
2.5
2
4
50
15
6
5
30
Units
V
μA
μA
V
Ω
A
mS
pF
pF
pF
ns
© 2009 Fairchild Semiconductor Corporation
2N7002K Rev. A1
2
www.fairchildsemi.com
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