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| 2N7002DW Datasheet, PDF (2/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
MIN
Off Characteristics (Note1)
BVDSS
Drain-Source Breakdown Voltage VGS= 0V, ID=10uA
60
IDSS
Zero Gate Voltage Drain Current VDS= 60V, VGS= 0V
-
VDS= 60V, VGS= 0V, @TC = 125°C
IGSS
Gate-Body Leakage
VGS= ±20V, VDS= 0V
-
On Characteristics (Note1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
1.0
RDS(ON)
Satic Drain-Source On-Resistance VGS = 5V, ID = 0.05A,
-
VGS = 10V, ID = 0.5A, @Tj = 125°C
-
ID(ON)
On-State Drain Current
VGS = 10V, VDS= 7.5V
0.5
gFS
Forward Transconductance
VDS = 10V, ID = 0.2A
80
Dynamic Characteristics
Ciss
Input Capacitance
-
Coss
Output Capacitance
VDS = 25V, VGS= 0V, f = 1.0MHz
-
Crss
Reverse Transfer Capacitance
-
Switching Characteristics
tD(ON)
tD(OFF)
Turn-On Delay Time
Turn-Off Delay Time
VDD = 30V, ID = 0.2A, VGEN= 10V
-
RL = 150â¦, RGEN = 25â¦
-
Note1 : Short duration test pulse used to minimize self-heating effect.
TYP MAX Units
78
-
V
0.001
1.0
7
500
uA
0.2
±10
nA
1.76
2.0
V
1.6
7.5
2.53
13.5
â¦
1.43
-
A
356.5
-
mS
37.8
50
pF
12.4
25
pF
6.5
7.0
pF
5.85
20
ns
12.5
20
© 2007 Fairchild Semiconductor Corporation
2N7002DW Rev. A
2
www.fairchildsemi.com
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