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| 2N5770 Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – NPN RF Transistor | |||
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
NPN RF Transistor
(continued)
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage* IC = 3.0 mA, IB = 0
15
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 1.0 µA, IE = 0
30
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
4.5
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB = 15 V, IE = 0
VCB = 15 V, IE = 0, TA = 150 °C
VEB = 3.0 V, IC = 0
VEB = 2.0 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 3.0 mA
20
VCE = 10 V, IC = 8.0 mA
50
VCE(sat)
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
SMALL SIGNAL CHARACTERISTICS
NF
Noise Figure
Ccb
Collector-Base Capacitance
Cib
Input Capacitance
IC = 1.0 mA, VCE = 8.0 V,
f = 60 MHz, Rg = 400 â¦
VCB = 10 V, IE = 0, f = 1.0 MHz
0.7
VEB = 0.5 V
hfe
Small-Signal Current Gain
IC = 8.0 mA, VCE = 10 V,
f = 100 MHz
9.0
IC = 8.0 mA, VCE = 10 V,
f = 1.0 kHz
40
rbâCC
Collector-Base Time Constant
IE = 8.0 mA, VCB = 10 V,
3.0
f = 79.8 MHz
FUNCTIONAL TEST
Gpe
Amplifier Power Gain
PO
Power Output
η
Collector Efficiency
IC = 6.0 mA, VCB = 12 V,
15
f = 200 MHz
VCC = 15 V, IC = 8.0 mA,
30
f = 500 MHz
25
*Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%
V
V
V
10
nA
1.0
µA
10
µA
1.0
µA
200
0.4
V
1.0
V
6.0
dB
1.1
pF
2.0
pF
18
240
20
pS
dB
mW
%
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