2N5551BU Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – NPN General-Purpose Amplifier

Absolute Maximum Ratings⁽²⁾
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
V_CEO
V_CBO
V_EBO
I_C
T_J, T_stg(2)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current - Continuous
Junction and Storage Temperature
160
V
180
V
6
V
600
mA
-55 to +150
°C
Notes:
2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3. These ratings are based on a maximum junction temperature of 150 °C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics
Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
P_D
R_θJC
R_θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum
2N5551
MMBT5551
625
350
5.0
2.8
83.3
200
357
Units
mW
mW/°C
°C/W
°C/W
© 2009 Fairchild Semiconductor Corporation
2N5551 / MMBT5551 Rev. 1.1.0
2
www.fairchildsemi.com