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| 2N5400_01 Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier | |||
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PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
120
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100 µA, IE = 0
130
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
V
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB = 100 V, IE = 0
VCB = 100 V, IE = 0, TA = 100 °C
VEB = 3.0 V, IC = 0
100
nA
100
µA
50
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE = 5.0 V, IC = 1.0 mA
VCE = 5.0 V, IC = 10 mA
VCE = 5.0 V, IC = 50 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
fT
Current Gain - Bandwidth Product
hfe
Small-Signal Current Gain
NF
Noise Figure
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
VCB = 10 V, f = 1.0 MHz
IC = 10 mA, VCE = 10 V,
f = 100 MHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
VCE = 5.0 V, IC = 250 µA,
RS = 1.0 kâ¦,
f = 10 Hz to 15.7 kHz
30
40
180
40
0.2
V
0.5
V
1.0
V
1.0
V
6.0
pF
100
400
30
200
8.0
V
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