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| 2N5306 Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – NPN Darlington Transistor | |||
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NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage* IC =10 mA, IB = 0
25
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 0.1 µA, IE = 0
25
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 0.1 µA, IC = 0
12
V
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0, TA = 100 °C
VEB = 12 V, IC = 0
0.1
µA
20
µA
0.1
µA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 5.0 V, IC = 2.0 mA
VCE = 5.0 V, IC = 100 mA
IC = 200 mA, IB = 0.2 mA
IC = 200 mA, IB = 0.2 mA
IC = 200 mA, VCE = 5.0 V
7,000 70,000
20,000
1.4
V
1.6
V
1.5
V
SMALL SIGNAL CHARACTERISTICS
Ccb
Collector-Base Capacitance
hfe
Small-Signal Current Gain
*Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%
VCB = 10 V, f = 1.0 MHz
IC =2.0 mA, VCE = 5.0 V,
f = 1.0 kHz
IC =2.0 mA, VCE = 5.0 V,
f = 10 MHz
10
pF
7,000
6.0
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