2N5210 Datasheet, PDF (2/2 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR

NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
V(BR)CBO
I_CBO
IEBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I_C = 1.0 mA, I_B = 0
IC = 0.1 mA, IE = 0
V_CB = 35 V, I_E = 0
VEB = 3.0 V, IC = 0
50
V
50
V
50
nA
50
nA
ON CHARACTERISTICS
h_FE
DC Current Gain
V_CE(sat)
V_BE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I_C = 100 µA, V_CE = 5.0 V
IC = 1.0 mA, VCE = 5.0 V
I_C = 10 mA, V_CE = 5.0 V*
IC = 10 mA, IB = 1.0 mA
I_C = 1.0 mA, V_CE = 5.0 V
200
600
250
250
0.7
V
0.85
V
SMALL SIGNAL CHARACTERISTICS
f_T
Current Gain - Bandwidth Product
I_C = 500 µA,V_CE = 5.0 V,
30
f= 20 MHz
MHz
C_cb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0, f = 100 kHz
4.0
pF
hfe
Small-Signal Current Gain
I_C = 1.0 mA, V_CE = 5.0 V,
f = 1.0 kHz
250
900
NF
Noise Figure
I_C = 20 µA, V_CE = 5.0 V,
RS = 22 kΩ, f = 10 Hz to 15.7 kHz
IC = 20 µA, VCE = 5.0 V,
R_S = 10 kΩ, f = 1.0 kHz
2.0
dB
3.0
dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%