 English |
|
|
|
|
|
|
|
| 2N5172_01 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier | |||
| |||
| ◁ |
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
ICBO
IEBO
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 25 V, IE = 0
VEB = 5.0 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 10 V, IC = 10 mA
IC = 10 mA, IB = 1.0 mA
VCE = 10 V, IC = 10 mA
SMALL SIGNAL CHARACTERISTICS
Ccb
Collector- Base Capacitance
hfe
Small-Signal Current Gain
*Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%
VCB = 10 V, f = 1.0 MHz
IC = 10 mA, VCE = 10 V,
f = 1.0 kHz
25
V
25
V
5.0
V
100
nA
100
nA
100
500
0.25
V
0.5
1.2
V
1.6
10
pF
100
750
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese