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| 2N4953 Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier | |||
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC =10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 40 V, IE = 0
VEB = 3.0 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 150 mA
IC = 150 mA, IB = 15 mA
IC = 150 mA, IB = 15 mA
VCE = 10 V, IC = 150 mA
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
hfe
Small-Signal Current Gain
ton
Turn-On Time
toff
Turn-Off Time
*Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%
VCB = 10 V, f = 1.0 MHz
IC = 20 mA, VCE = 10 V,
f = 100 MHz
VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA
30
V
60
V
5.0
V
50
nA
50
nA
75
150
200
600
0.3
V
1.3
V
1.2
V
8.0
pF
2.5
40
ns
400
ns
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