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| 2N4402 Datasheet, PDF (2/2 Pages) ON Semiconductor – General Purpose Transistors(PNP Silicon) | |||
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PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICEX
Collector Cutoff Current
IBL
Base Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCE = 35 V, VEB = 0.4 V
VCE = 35 V, VEB = 0.4 V
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
VCE = 2.0 V, IC = 150 mA
VCE = 2.0 V, IC = 500 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
Cib
Input Capacitance
hfe
Small-Signal Current Gain
hfe
Small-Signal Current Gain
hie
Input Impedance
hre
Voltage Feedback Ratio
hoe
Output Admittance
VCB = 10 V, f = 140 kHz
VEB = 0.5 V, f = 140 kHz
IC = 20 mA, VCE = 10 V,
f = 100 MHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
*Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%
VCC = 30 V, IC =150 mA,
IB1 = 15 mA, VBE ( off ) = 2.0 V
VCC = 30 V, IC =150 mA,
IB1 = IB2 = 15 mA
40
V
40
V
5.0
V
0.1
µA
0.1
µA
30
50
50
150
20
0.40
V
0.75
V
0.75
0.95
V
1.30
V
8.5
pF
30
pF
1.5
30
250
0.75
7.5
kâ¦
0.10
8.0
x10-4
1.0
100
µmhos
15
ns
20
ns
225
ns
30
ns
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