2N3906TFR Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

Absolute Maximum Ratings⁽¹⁾
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
V_CEO
V_CBO
Collector-Emitter Voltage
Collector-Base Voltage
-40
V
-40
V
V_EBO Emitter-Base Voltage
-5.0
V
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
-200
mA
-55 to +150
°C
Note:
1. These ratings are based on a maximum junction temperature of 150 °C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics
Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
2N3906
Max.
MMBT3906⁽²⁾ PZT3906⁽³⁾
Units
Total Device Dissipation
P_D
Derate above 25°C
625
350
1,000
mW
5.0
2.8
8.0
mW/°C
R_θJC
Thermal Resistance, Junction to Case
83.3
°C/W
R_θJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
Notes:
2. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
3. Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead minimum 6 cm².
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1
2
www.fairchildsemi.com