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| 2N3905_01 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier | |||
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PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICEX
Collector Cutoff Current
IBL
Base Cutoff Current
IC = 1.0 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCE = 30 V, VOB = 3.0 V
VCE = 30 V, VOB = 3.0 V
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE = 1.0 V, IC = 0.1 mA
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
VCE = 1.0 V, IC = 50 mA
VCE = 1.0 V, IC = 100 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
Cib
Input Capacitance
hfe
Small-Signal Current Gain
hfe
Small-Signal Current Gain
hre
Voltage Feedback Ratio
hie
Input Impedance
hoe
Output Impedance
NF
Noise Figure
VCB = 5.0 V, f = 1.0 MHz
VEB = 0.5 V, f = 1.0 MHz
IC = 10 mA, VCE = 20 V,
f = 100 MHz
IC = 1.0 mA, VCE =10 V,
f = 1.0 KHz
VCE = 5.0 V, IC = 100 µA,
RS = 1.0 kâ¦,
BW = 10 Hz to 15.7 KHz
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
*Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%
VCC = 3.0 V, ICS = 10 mA,
IB1 = 1.0 mA ,VOB ( off ) = 3.0 V
VCC = 3.0 V, ICS = 10 mA,
IB1 = IB2 = 1.0 mA
40
V
40
V
5.0
V
50
nA
50
nA
30
40
50
150
30
15
0.25
V
0.40
V
0.65
0.85
V
0.95
V
4.5
pF
10
pF
2.0
50
200
0.1
5.0
x10 -4
0.5
8.0
kâ¦
1.0
40
µmhos
5.0
dB
35
ns
35
ns
200
ns
60
ns
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