2N3903 Datasheet, PDF (2/2 Pages) ON Semiconductor – General Purpose Transistors(NPN Silicon)

NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
Collector-Emitter Breakdown Voltage*
V_(BR)CBO
V_(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I_CEX
z
I_BL
Collector Cutoff Current
Base Cutoff Current
I_C = 1.0 mA, I_B = 0
I_C = 10 µA, I_E = 0
I_E = 10 µA, I_C = 0
V_CE = 30 V, V_OB = 3.0 V
V_CE = 30 V, V_OB = 3.0 V
40
V
60
V
6.0
V
50
nA
50
nA
ON CHARACTERISTICS*
h_FE
DC Current Gain
VCE(_sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V_CE = 1.0 V, I_C = 0.1 mA
V_CE = 1.0 V, I_C = 1.0 mA
VCE = 1.0 V, IC = 10 mA
V_CE = 1.0 V, I_C = 50 mA
V_CE = 1.0 V, I_C = 100 mA
I_C = 10 mA, I_B = 1.0 mA
I_C = 50 mA, I_B = 5.0 mA
I_C = 10 mA, I_B = 1.0 mA
I_C = 50 mA, I_B = 5.0 mA
20
35
50
150
30
15
0.2
V
0.3
V
0.65
0.85
V
0.95
V
SMALL SIGNAL CHARACTERISTICS
C_ob
Output Capacitance
C_ib
Input Capacitance
hfe
Small-Signal Current Gain
hfe
Small-Signal Current Gain
h_ie
Input Impedance
hre
Voltage Feedback Ratio
h_oe
Output Admittance
NF
Noise Figure
V_CB = 5.0 V, f = 100 kHz
V_EB = 0.5 V, f = 100 kHz
I_C = 10 mA, V_CE = 20 V,
f = 100 MHz
V_CE = 10 V, I_C = 1.0 mA
f = 1.0 kHz
VCE = 5.0 V, IC = 100 µA,
RS = 1.0 kΩ,
B_W = 10 Hz to 15.7 kHz
4.0
pF
8.0
pF
2.5
50
200
1.0
8.0
kΩ
0.1
5.0
x 10^-4
1.0
40
µmhos
6.0
dB
SWITCHING CHARACTERISTICS
t_d
Delay Time
t_r
Rise Time
ts
Storage Time
t_f
Fall Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
V_CC = 3.0 V, I_C = 10 mA,
I_B1 = 1.0 mA , V_{ob ( off )} = 0.5 V
V_CC = 3.0 V, I_C = 10 mA
I_B1 = I_B2 = 1.0 mA
35
ns
35
ns
175
ns
50
ns