2N3416_01 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 10 mA, IB = 0
50
V
Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage I_C = 10 µA, I_E = 0
50
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
V
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
VCB = 25 V, IE = 0
VCB = 18 V, IE = 0, TA = 100°C
VEB = 5.0 V, IC = 0
100
nA
15
µA
100
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 4.5 V, IC = 2.0 mA
2N3416
75
225
2N3417
180
540
VCE(sat)
Collector-Emitter Saturation Voltage IC = 50 mA, IB = 3.0 mA
0.3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 50 mA, IB = 3.0 mA
0.6
1.3
V
SMALL SIGNAL CHARACTERISTICS
hfe
Small-Signal Current Gain
IC = 2.0 mA, VCE = 4.5 V,
f = 1.0 kHz
2N3416
75
2N3417
180
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%