1MBI300S-120 Datasheet, PDF (2/4 Pages) Fujitsu Component Limited. – 1-Pack IGBT 1200V 1x300A

1MBI300S-120
Characteristics
Collector current vs. Collector-Emiiter voltage
Tj= 25°C (typ.)
700
VGE= 20V 15V 12V
600
500
400
10V
300
200
100
0
0
1
2
3
4
Collector - Emitter voltage : VCE [ V ]
8V
5
700
600
500
400
300
200
100
0
0
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
Tj= 25°C Tj= 125°C
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
100000
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Cies
10000
5000
1000
0
Coes
Cres
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
IGBT Module
700
600
500
400
300
200
100
0
0
Collector current vs. Collector-Emiiter voltage
Tj= 125°C (typ.)
VGE= 20V 15V 12V
10V
8V
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
10
8
6
4
2
0
5
1000
Ic= 600A
Ic= 300A
Ic=150A
10
15
20
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=300A, Tj= 25°C
25
25
800
20
600
15
400
10
200
5
0
0
0
1000
2000
3000
Gate charge : Qg [ nC ]