FSEZ1317 Datasheet, PDF (14/17 Pages) Fairchild Semiconductor – Primary-Side-Regulation PWM with POWER MOSFET Integrated

Typical Application Circuit (Continued)
Transformer Specification
ƒ Core: EE16
ƒ Bobbin: EE16
Figure 33. Transformer Specification
Notes:
6. When W4R’s winding is reversed winding, it must wind one layer.
7. When W2 is winding, it must wind three layers and put one layer of tape after winding the first layer.
Terminal
No.
S
F
Wire
Insulation
Barrier Tape
t_s
t_s
Primary Seconds
W1
4
5
2UEW 0.23*2
15
2
41
1
W2
3
1
2UEW 0.17*1
39
0
37
2
W3
1
-
COPPER SHIELD
1.2
3
W4
7
9
TEX-E 0.55*1
9
3
CORE ROUNDING TAPE
3
Primary-Side Inductance
Primary-Side Effective Leakage
Pin
1－3
1－3
Specification
2.25mH ± 7%
80μH ± 5%
Remark
100kHz, 1V
Short One of the Secondary Windings
© 2009 Fairchild Semiconductor Corporation
FSEZ1317 • Rev. 1.0.4
14
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