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FDMF6824C Datasheet, PDF (12/19 Pages) Fairchild Semiconductor – FDMF6824C — Extra-Small, High-Performance, High-Frequency DrMOS Module
Functional Description
The FDMF6824C is a driver-plus-FET module optimized
for the synchronous buck converter topology. A single
PWM input signal is all that is required to properly drive
the high-side and the low-side MOSFETs. Each part is
capable of driving speeds up to 1 MHz.
VCIN and Disable (DISB#)
The VCIN pin is monitored by an Under-Voltage Lockout
(UVLO) circuit. When VCIN rises above ~3.1 V, the driver
is enabled. When VCIN falls below ~2.7 V, the driver is
disabled (GH, GL=0). The driver can also be disabled by
pulling the DISB# pin LOW (DISB# < VIL_DISB), which
holds both GL and GH LOW regardless of the PWM
input state. The driver can be enabled by raising the
DISB# pin voltage HIGH (DISB# > VIH_DISB).
Table 1. UVLO and Disable Logic
UVLO DISB#
Driver State
0
X
1
0
Disabled (GH, GL=0)
Disabled (GH, GL=0)
1
1
Enabled (see Table 2)
1
Open
Disabled (GH, GL=0)
Note:
3. DISB# internal pull-down current source is 10 µA.
Thermal Warning Flag (THWN#)
The FDMF6824C provides a thermal warning flag
(THWN#) to warn of over-temperature conditions. The
thermal warning flag uses an open-drain output that
pulls to CGND when the activation temperature (150°C)
is reached. The THWN# output returns to a high-
impedance state once the temperature falls to the reset
temperature (135°C). For use, the THWN# output
requires a pull-up resistor, which can be connected to
VCIN. THWN# does NOT disable the DrMOS module.
THWN#
Logic
State
HIGH
135°C Reset 150°C
Temperature Activation
Temperature
Normal
Operation
Thermal
Warning
LOW
TJ_driver IC
Figure 26. THWN Operation
Three-State PWM Input
The FDMF6824C incorporates a three-state 5V PWM
input gate drive design. The three-state gate drive has
both logic HIGH level and LOW level, along with a
three-state shutdown window. When the PWM input
signal enters and remains within the three-state window
for a defined hold-off time (tD_HOLD-OFF), both GL and GH
are pulled LOW. This enables the gate drive to shut
down both high-side and low-side MOSFETs to support
features such as phase shedding, which is common on
multi-phase voltage regulators.
Exiting Three-State Condition
When exiting a valid three-state condition, the
FDMF6824C follows the PWM input command. If the
PWM input goes from three-state to LOW, the low-side
MOSFET is turned on. If the PWM input goes from
three-state to HIGH, the high-side MOSFET is turned
on. This is illustrated in Figure 27. The FDMF6824C
design allows for short propagation delays when exiting
the three-state window (see Electrical Characteristics).
Low-Side Driver
The low-side driver (GL) is designed to drive a ground-
referenced, low-RDS(ON), N-channel MOSFET. The bias
for GL is internally connected between the VDRV and
CGND pins. When the driver is enabled, the driver's
output is 180° out of phase with the PWM input. When
the driver is disabled (DISB#=0 V), GL is held LOW.
High-Side Driver
The high-side driver (GH) is designed to drive a floating
N-channel MOSFET. The bias voltage for the high-side
driver is developed by a bootstrap supply circuit
consisting of the internal Schottky diode and external
bootstrap capacitor (CBOOT). During startup, VSWH is held
at PGND, allowing CBOOT to charge to VDRV through the
internal diode. When the PWM input goes HIGH, GH
begins to charge the gate of the high-side MOSFET (Q1).
During this transition, the charge is removed from CBOOT
and delivered to the gate of Q1. As Q1 turns on, VSWH
rises to VIN, forcing the BOOT pin to VIN + VBOOT, which
provides sufficient VGS enhancement for Q1. To complete
the switching cycle, Q1 is turned off by pulling GH to
VSWH. CBOOT is then recharged to VDRV when VSWH falls to
PGND. GH output is in-phase with the PWM input. The
high-side gate is held LOW when the driver is disabled or
the PWM signal is held within the three-state window for
longer than the three-state hold-off time, tD_HOLD-OFF.
© 2013 Fairchild Semiconductor Corporation
FDMF6824C • Rev. 1.0.1
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