ZTX749A Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP Low Saturation Transistor

ZTX749A
PNP Low Saturation Transistor
• This device are designed with high current gain and low saturation
voltage with collector currents up to 2A continuous.
CBE
TO-226
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
-35
V_CBO
Collector-Base Voltage
-45
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current
- Continuous
-2
T_J, T_STG
Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Off Characteristics
BV_CEO
Collector-Emitter Breakdown Voltage
I_C = -10mA
-35
BV_CBO
Collector-Base Breakdown Voltage
I_C = -100µA
-45
BV_EBO
Emitter-Base Breakdown Voltage
I_E = -100µA
-5
I_CBO
Collector Cutoff Current
V_CB = -30V
V_CB = -30V, T_A = 100°C
I_EBO
Emitter Cutoff Current
V_EB = -4V
On Characteristics*
h_FE
DC Current Gain
I_C = -50mA, V_CE = -2V
70
I_C = -1A, V_CE = -2V
100
I_C = -2A, V_CE = -2V
75
I_C = -6A, V_CE = -2V
15
V_CE(sat) Collector-Emitter Saturation Voltage
I_C = -1A, I_B = -100mA
I_C = -2A, I_B = -200mA
V_BE(sat) Base-Emitter Saturation Voltage
I_C = -1A, I_B = -100mA
V_BE(on) Base-Emitter On Voltage
I_C = -1A, V_CE = -2V
Small-Signal Characteristics
C_obo
f_T
Output Capacitance
Transition Frequency
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
V_CB = -10V, I_E = 0, f = 1MHz
I_C = -100mA, V_CE = -5V
100
f = 100MHz
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Max.
P_D
Total Device Dissipation
1
R_θJA
Thermal Resistance, Junction to Ambient
125
Units
V
V
V
A
°C
Max. Units
V
V
V
-100 nA
-10
µA
-100 nA
300
-300 mV
-500
-1.25 V
-1
V
100
PF
Units
W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. C, August 2003