ZTX614 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

ZTX614
NPN Darlington Transistor
• These device is designed for applications requiring extremely high
gain at collector currents to 0.5A and high breakdown voltage.
• Sourced from process 06.
CBE
TO-226
Absolute Maximum Ratings* T_A=25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
100
V_CBO
Collector-Base Voltage
120
V_EBO
Emitter-Base Voltage
10
I_C
Collector Current
- Continuous
800
T_J, T_STG Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO
Collector-Emitter Breakdown Voltage*
V_(BR)CBO
Collector-Emitter Breakdown Voltage
V_(BR)EBO
Emitter-Base Breakdown Voltage
I_CBO
Collector Cutoff Current
I_EBO
Emitter Cutoff Current
On Characteristics*
I_C = 10mA, I_B = 0
I_C = 100µA, I_E = 0
I_E = 100µA, I_C = 0
V_CB = 60V, I_E = 0
V_EB = 8V, I_C = 0
h_FE
DC Current Gain
V_CE(sat)
Collector-Emitter Saturation Voltage
V_BE(on)
Base-Emitter On Voltage
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
I_C = 100mA, V_CE = 5V
I_C = 500mA, V_CE = 5V
I_C = 800mA, I_B = 8mA
I_C = 800mA, V_BE = 5V
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Min. Typ. Max. Units
100
V
120
V
10
0.1 µA
0.1 µA
5000
10000
1.25 V
1.8 V
Max.
1000
8
50
125
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002