USB10H Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench MOSFET

February 1999
USB10H
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.
• -1.9 A, -20 V. R_DS(on) = 0.170 Ω @ V_GS = -4.5 V
R_DS(on) = 0.250Ω @ V_GS = -2.5 V
• Low gate charge (3 nC typical).
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
Applications
• Load switch
• Battery protection
• Power management
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D2
S1
D1
SuperSOT ^TM -6
G2
S2
G1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
4
3
5
2
6
1
Ratings
-20
±8
-1.9
-5
0.96
0.9
0.7
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
130
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.306
USB10H
7’’
Tape Width
8mm
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
USB10H Rev. C