TN6729A_00 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

TN6729A
NZT6729
C
C
BE
TO-226
SOT-223
E
C
B
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 800
mA. Sourced from Process 79.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
V_CBO
V_EBO
I_C
T_J, T_stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
80
80
5.0
1.0
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
Thermal Resistance, Junction to Case
R_θJA
Thermal Resistance, Junction to Ambient
Max
TN6729A
1.0
8.0
50
*NZT6729
1.0
8.0
125
125
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².
Units
W
mW /°C
°C/W
°C/W
 1997 Fairchild Semiconductor Corporation