TN6729A Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

Discrete POWER & Signal
Technologies
TN6729A
NZT6729
C
BE
TO-226
C
SOT-223
E
C
B
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 800 mA.
Sourced from Process 79.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
80
VCBO
Collector-Base Voltage
80
V_EBO
Emitter-Base Voltage
5.0
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
TN6729A
PD
Total Device Dissipation
1.0
Derate above 25°C
8.0
Rθ_JC
Thermal Resistance, Junction to Case
50
RθJA
Thermal Resistance, Junction to Ambient
125
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².
*NZ T6729
1.0
8.0
125
Units
V
V
V
A
°C
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation