TN6725A Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN Darlington Transistor

TN6725A
Discrete Power & Signal
Technologies
CBE
TO-226
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced
from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CES
Collector-Emitter Voltage
50
V_CBO
Collector-Base Voltage
60
V_EBO
Emitter-Base Voltage
12
I_C
Collector Current - Continuous
1.2
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Max
Symbol
Characteristic
TN6725A
P_D
Total Device Dissipation
1
Derate above 25°C
8
R_θJC
Thermal Resistance, Junction to Case
50
R_θJA
Thermal Resistance, Junction to Ambient
125
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
TN6725A, Rev A