TN6716A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

TN6716A
CBE
TO-226
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to
1.2A. Sourced from Process 38. See TN6715A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
60
V_CBO
Collector-Base Voltage
60
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current - Continuous
2
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
R_θJC
R_θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
T_A=25°C
1
8
50
125
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor
Pr38 TN6716A.SAM revC