TN6715A_00 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

TN6715A
NZT6715
C
C
BE
TO-226
SOT-223
E
C
B
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 38.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
V_CBO
V_EBO
Collector-Base Voltage
Emitter-Base Voltage
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
40
50
5.0
1.5
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
Thermal Resistance, Junction to Case
R_θJA
Thermal Resistance, Junction to Ambient
TN6715A
1.0
8.0
50
125
*NZT6715
1.0
8.0
125
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².
Units
W
mW /°C
°C/W
°C/W
 1997 Fairchild Semiconductor Corporation