TN6707A Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

TN6707A
NPN General Purpose Amplifier
• These devices is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0A
• Sourced from process 39.
CBE
TO-226
Absolute Maximum Ratings* T_A=25°C unless otherwise noted
Symbol
Parameter
FPN660
V_CEO
Collector-Emitter Voltage
80
V_CBO
Collector-Base Voltage
100
V_EBO
Emitter-Base Voltage
5.0
I_C
Collector Current
- Continuous
1.2
T_J, T_STG Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
V_(BR)CEO Collector-Emitter Breakdown Voltage * I_C = 10mA, I_B = 0
80
V_(BR)CBO Collector-Base Breakdown Voltage
I_E = 100µA, I_E = 0
100
V_(BR)EBO Emitter-Base Breakdown Voltage
I_E = 1.0mA, I_C = 0
5.0
I_CBO
Collector-Base Cutoff Current
V_CB = 80V, I_E = 0
I_EBO
Emitter-Base Cutoff Current
V_EB = 5.0V, I_C = 0
On Characteristics *
h_FE
DC Current Gain
V_CE = 2.0V, I_C = 50mA
40
V_CE = 2.0V, I_C = 250mA
40
V_CE = 2.0V, I_C = 500mA
25
V_CE(sat) Collector-Emitter Saturation Voltage
I_C = 500mA, I_B = 50mA
I_C = 1.0A, I_B = 100mA
V_BE(on) Base-Emitter On Voltage
V_CE = 2.0V, I_C = 1.0A
Small Signal Characteristics
h_fe
Output Capacitance
f_T
Current Gain Bandwidth Product
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V_CE = 5.0V, I_C = 200mA, f = 20MHz
2.5
V_CE = 5.0V, I_C = 50mA, f = 20MHz
50
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
1.0
8.0
50
125
Max. Units
V
V
V
0.1
µA
0.1
µA
250
0.5
V
1.0
V
1.5
V
20 MHz
MHz
Units
W
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, January 2003