TN5415A Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – PNP High Voltage Amplifier

TN5415A
Discrete POWER & Signal
Technologies
C
BE
TO-226
PNP High Voltage Amplifier
This device is designed for use as high voltage drivers requiring
collector currents to 100 mA. Sourced from Process 76. See
MPSA92 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
200
VCBO
Collector-Base Voltage
200
V_EBO
Emitter-Base Voltage
4.0
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
100
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
TN5415A
1.0
8.0
125
50
Units
V
V
V
mA
°C
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation