TN5320A Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP High Voltage Amplifier

September 2007
TN5320A
PNP High Voltage Amplifier
• This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A.
• Sourced from Process 34.
1
TO-226
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
V_CBO
V_CEO
V_EBO
I_C
T_J, T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Value
75
75
7
500
-55 ~ +150
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
1.0
8.0
125
50
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 2007 Fairchild Semiconductor Corporation
TN5320A Rev. 1.0.0
1
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