TN3467A Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – PNP Switching Transistor

Discrete POWER & Signal
Technologies
TN3467A
C
BE
TO-226
MMPQ3467
BE ^B
BE
E
B
E
CC
C
CC
C
C
C
SOIC-16
PNP Switching Transistor
This device is designed for high speed saturated switching applications
at currents to 800 mA. Sourced from Process 70.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
40
V_EBO
Emitter-Base Voltage
5.0
I_C
Collector Current - Continuous
1.2
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
Rθ_JA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
Max
TN3467A
1.0
8.0
50
125
MMPQ3467
1.0
8.0
125
240
Units
W
mW/°C
°C/W
°C/W
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation